▎ 摘　　要

The elastic buckling behavior of a defect-free single-layered graphene sheet deposited on a strained InGaAs substrate is investigated. Such a buckled sandwich structure can be formed by local etching of an initially strained InGaAs substrate. We numerically investigated the necessary buckling conditions for a single-layered graphene sheet of circular geometry on an initially strained InGaAs thin plate. A criterion for buckling for various axisymmetric buckling shapes was obtained. It is shown that for a thin circular InGaAs plate with a monolayer graphene sheet of radius 80 nm and thickness 4 nm three axisymmetric buckling shapes can be obtained. For an initial value of the elastic deformation of the plate of 3%, the in-plane strain in graphene can reach a value of 1%. This deformation is shown to be distributed inhomogeneously along the radius of the graphene monolayer.