• 文献标题:   Interface and strain effects on the fabrication of suspended CVD graphene devices
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   AYDIN OI, HALLAM T, THOMASSIN JL, MOUIS M, DUESBERG GS
  • 作者关键词:   cvd graphene, suspended beam, processing technology, mechanical strain, fold, raman, afm
  • 出版物名称:   SOLIDSTATE ELECTRONICS
  • ISSN:   0038-1101 EI 1879-2405
  • 通讯作者地址:   Grenoble INP Minatec
  • 被引频次:   7
  • DOI:   10.1016/j.sse.2014.12.003
  • 出版年:   2015

▎ 摘  要

It is known that the fabrication of graphene NEMS raises several technological issues. The most mentioned among these is beam collapse due to the capillary effects. However, we found that controlling the quality of the interface of graphene and the etch mask requires at least equal attention. By taking this into account, we succeeded developing a robust route for the fabrication of suspended graphene structures, using technological steps compatible with large-scale fabrication. AFM and Raman characterization results are used to probe suspension, added defects and strain evolution during the process. (C) 2015 Elsevier Ltd. All rights reserved.