• 文献标题:   Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments
  • 文献类型:   Article
  • 作  者:   SHIN DW, KIM TS, YOO JB
  • 作者关键词:   electronic material, vapor deposition, electron energy loss spectroscopy eels, defect, phosphor
  • 出版物名称:   MATERIALS RESEARCH BULLETIN
  • ISSN:   0025-5408 EI 1873-4227
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   5
  • DOI:   10.1016/j.materresbull.2016.02.009
  • 出版年:   2016

▎ 摘  要

Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a Vdirac of similar to-54V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices. (C) 2016 Elsevier Ltd. All rights reserved.