• 文献标题:   Graphene-insulator-graphene active plasmonic terahertz devices
  • 文献类型:   Article
  • 作  者:   SENSALERODRIGUEZ B
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Utah
  • 被引频次:   40
  • DOI:   10.1063/1.4821221
  • 出版年:   2013

▎ 摘  要

This work theoretically explores the perspectives of stacked graphene-insulator-graphene layers as active terahertz devices. Out-of-plane resonant tunneling current between the graphene layers is shown to constitute a gain medium for electron-plasma-waves propagating in the plane of the graphene sheets. The interaction between both phenomena can lead to either stable THz amplification (with power gain >7 dB) or very sensitive terahertz detection (with sensitivity >10(5) V/W) under appropriate device configurations. (C) 2013 AIP Publishing LLC.