▎ 摘　　要

Catalyst-free growth of graphene directly on dielectric substrates is a challenging work for graphene-based electronics. In this paper, a simple method to synthesize large area few layer graphene films on silicon dioxide/Si substrates by chemical vapor deposition is reported. A novel liquid carbon source (ethylene glycol) is used, without any catalysts. The obtained graphene films are characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy. The field effect transistor with graphene film as channel material is fabricated, and the carrier mobility is 707 cm(2) V-1 .S-1. This work offers a new strategy to directly grow graphene on silicon dioxide/Si substrates, and the as-synthesized graphene films may have potential applications in sensors, conductive films, electronic devices, etc.