• 文献标题:   Ultrahigh responsive negative photoconductivity photodetector based on multilayer graphene/InSe van der Waals heterostructure
  • 文献类型:   Article
  • 作  者:   CUI BY, XING YH, NIU KY, HAN J, MA HX, LV WM, LEI T, WANG BH, ZENG ZM
  • 作者关键词:   twodimensional material, graphene photodetector, inse nanosheet, van der waals heterostructure, negative photoconductivity
  • 出版物名称:   JOURNAL OF SCIENCEADVANCED MATERIALS DEVICES
  • ISSN:   2468-2284 EI 2468-2179
  • 通讯作者地址:  
  • 被引频次:   6
  • DOI:   10.1016/j.jsamd.2022.100484 EA SEP 2022
  • 出版年:   2022

▎ 摘  要

Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are fabricated. The InSe photodetector shows positive photoconductivity (PPC) behavior, while the MLG/InSe photodetector exhibits NPC behavior. The ultra-high responsivity (1.88 x 10(5) A/W) is achieved for the NPC MLG/InSe photodetector, which is five orders of magnitude higher than that of the sole InSe photodetector based on PPC (6.97 A/W). The MLG/InSe photodetector also shows a high external quantum efficiency (6.41 x 10(7)%) and a fast response time (22 ms). The proposed high-performance MLG/InSe heterostructure photodetector based on NPC for low -dimensional materials may extend applications in future optoelectronic devices.(c) 2022 Vietnam National University, Hanoi. Published by Elsevier B.V.