▎ 摘　　要

We have studied the effect of temperature and etching duration of the 4H-SiC (0001) surface in hydrogen on the structural perfection of graphene films grown by thermal destruction. Several technological modes have been identified that enable etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pregrowth etching in hydrogen at T = 1600 degrees C with a duration of 1 min makes it possible to obtain a more uniform and structurally perfect graphene than etching at T = 1300 degrees C with a 30 min duration.