▎ 摘　　要

Due to the ultra-high electron mobility, graphene has been proposed as a prospective candidate for the photodetection. Nevertheless the relatively low photo absorption limits its potential application. On the other hand, the semiconductor quantum dots has exhibited high quantum efficiency and strong optical absorption. A novel pho-todetector by the incorporation of graphene with InAs quantum dots on GaAs substrate has been proposed. The per-formance of the fabricated photodetector, such like photoresponse, dark current, and time response, have been ex-tensively studied. The photodetector based on graphene/InAs QDs/GaAs hybrid hetero-junction demonstrated that for the visible range of 637 nm a responsivity of about 17.0 mA/W, and detectivity of 2.3 x 10(10) cmHz(1/2) W with an on/off ratio of about 1x10(3) could be achieved. For the near infrared range of 940 nm, an even higher re-sponsivity of of 207 mA/W has been obtained. Moreover a stronger dependence of dark current, Schottky barrier height and ideality factor on temperature has also been observed.