• 文献标题:   Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
  • 文献类型:   Article
  • 作  者:   YAMAGUCHI T, MASUBUCHI S, IGUCHI K, MORIYA R, MACHIDA T
  • 作者关键词:   spin injection, graphene, tunnel barrier, atomic layer deposition
  • 出版物名称:   JOURNAL OF MAGNETISM MAGNETIC MATERIALS
  • ISSN:   0304-8853 EI 1873-4766
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   24
  • DOI:   10.1016/j.jmmm.2011.09.031
  • 出版年:   2012

▎ 摘  要

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.