文献标题: U-shaped bilayer graphene channel transistor with very high I-on/I-off ratio
文献类型: Article
作 者: MOKTADIR Z, BODEN SA, GHIASS A, RUTT H, MIZUTA H
作者关键词:
出版物名称: ELECTRONICS LETTERS
ISSN: 0013-5194
通讯作者地址: Univ Southampton
被引频次: 10
DOI: 10.1049/el.2010.3029
出版年: 2011
▎ 摘 要
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The I-on/I-off ratio exceeded 10(5).
