▎ 摘　　要

We develop a tunneling probability model based on a structure of p(+)-i-n(+) of a graphene nanoribbon (GNR) tunnel field-effect transistors (TFETs), and present an analytical drain current model based on the tunneling probability model. Model results are compared with those in the literature, and good agreements are observed. With the drain current model, the output and transfer characteristics of currents in a GNR TFET can be obtained easily and quickly. Being in an explicit form, the drain current model can be embedded in the integrated circuit design simulation tools. We observe that low temperature favors both the GNR TFET's drain current and subthreshold swing. (C) 2019 The Japan Society of Applied Physics