▎ 摘　　要

In this letter, we present for the first time a mixer circuit based on Metal-Insulator-Graphene (MIG) diodes fabricated with large-scale monolayer graphene grown by chemical vapor deposition. A small-signal model extracted from the diode physical structure is used together with a large-signal model extracted from the dc characteristics of the MIG diode to build a down-conversion mixer. The measured conversion loss at a local oscillator power (P-LO) of 5 dBm is lower than 15 dB, while RF-to-IF isolation is 36 dB with an input return loss and RF-to-LO isolation better than 10 dB over the frequency band from 1.7-6 GHz. Promising mixer results in combination with the CVD-based process promote the MIG diode-based mixer to be used in low-power, low-cost, microwave, and millimeter-wave circuit applications.