▎ 摘　　要

The main aim of the work was investigation of the graphene resistance on mechanical scratch after ion beam bombardment. The CVD graphene on the glass substrate was used. Bombardment of graphene by beams of helium and nitrogen ions of energy 100 keV was applied. Density of ion induced defects in graphene was evaluated using Raman spectroscopy. The polymer indenter was applied for scratch test. Increase of the scratch resistance of the graphene after ion beam bombardment was observed. Scratch resistance of the graphene layer increases with increasing density of defects induced by helium and nitrogen ions. The shape of graphene ribbons exfoliated during scratch test suggests that increase of graphene scratch resistance is accompanied with improvement of graphene adhesion to the substrate. It suggests that ion beam induced defects may be responsible for observed increasing of both graphene scratch resistance ad graphene adhesion to the substrate.