▎ 摘　　要

In this paper, three-dimensional (3D) graphene/P-type indium phosphide (P-InP) nanopillar Schottky junction near-infrared photodetectors based on TCAD were built. The simulation results show that the Schottky barrier height of near infrared photodetector increases with the decrease of nanopillar size when the height of nanopillar is 10 mu m. At 0 V bias voltage, when the wavelength of incident light is 808 nm, the responsivity increases gradually with the decrease of the size of the nanopillar, and the electric field intensity in the depletion region increases obviously. When the size of the nanopillar is fixed and the height of the nanopillar approaches the width of the depletion region, the responsivity of the detector reaches the maximum value. It shows the nanopillar structure can significantly improve the performance of the photodetectors. (C) 2021 Elsevier B.V. All rights reserved.