▎ 摘　　要

Humidity is the one of physical quantities that widely measured and is of very important in a many fields. In this paper, the ultra sensor of humidity was created using modified porous layer of silicon (PS), by thin films of reduction graphene oxide sheets (rGO). The electrochemical method was applied to exfoliation electrodes of graphite for preparing rGO sheets in peeling solution Acidic about PH = 4.6. p-type of Silicon waver (Si) was used for formulating PS samples using electrochemical etching (ECE) process. three etching current density 2, 4 & 6 mA/cm(2) were used and fixed the other parameters such as Hydrofluoric acid HFc concentration was 15%, and time of etching about 15 min. All the samples of PS and rGO/PS were tested as humidity sensor. the structure characteristic, morphological properties and surface chemical bonds configuration were described by X-ray diffraction (XRD). Scanning electron microscopy (SEM), and Fourier Transform Infrared Spectroscopy (FTIR) consequently, also the Photoluminescence (PL) tests were conducted by using system of sensor test, the measurements of PL in a controlled humidity atmosphere (mixing gas of Nitrogen with humidity (vapor of water) were performed for examining the sensor response to the water vapor. The results showed that all samples revealed that the PL intensities were increased while rGO sheets deposited on the surface layer of PS, and improved the sensitivity of PS as humidity sensor.