• 文献标题:   Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application
  • 文献类型:   Article
  • 作  者:   KALITA G, WAKITA K, UMENO M
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Chubu Univ
  • 被引频次:   47
  • DOI:   10.1039/c2ra00648k
  • 出版年:   2012

▎ 摘  要

Here, we report the synthesis of a graphene film on Cu foil by microwave assisted surface wave plasma chemical vapor deposition (MW-SWP-CVD) at a low pressure and temperature using a hydrocarbon gas. Raman spectroscopy and transmission electron microscopy (TEM) studies clearly show deposited carbon films that consist of few layer graphene sheets. Deposition of graphene films with a few layers structure was achieved at a temperature as low as 240 degrees C. In the nucleation and growth process, carbon radicals are formed with hydrogen termination in the surface wave plasma, which absorb continuously on the Cu surface to form sp(2) carbon and eventually a graphene structure. The transparency and conductivity characteristics of the transferred graphene films show suitability for flexible electronics applications.