• 文献标题:   Electrical and mechanical properties of graphene oxide on flexible substrate
  • 文献类型:   Article
  • 作  者:   KANG SH, FANG TH, HONG ZH
  • 作者关键词:   nanostructure, oxide, thin film, raman spectroscopy, electrical conductivity
  • 出版物名称:   JOURNAL OF PHYSICS CHEMISTRY OF SOLIDS
  • ISSN:   0022-3697 EI 1879-2553
  • 通讯作者地址:   Natl Kaohsiung Univ Appl Sci
  • 被引频次:   19
  • DOI:   10.1016/j.jpcs.2013.07.009
  • 出版年:   2013

▎ 摘  要

Graphene oxide (GO) was deposited via the electrophoretic deposition (EPD) method to lower the oxygen concentration of graphene sheets for large-scale production. In addition, the direct synthesis of large-scale GO films using transfer processes on a polydimethylsiloxane (PDMS) substrate was conducted. The thickness of the GO films was controlled to adjust the optical, electrical, and mechanical properties. The Young's modulus values of films with thicknesses of 100-200 nm were 324-529 GPa. Moreover, the GO films exhibited excellent conductivity, with a sheet resistance of 276-2024 Omega/sq at 23-77% transparency. Experiments show that transfer processes for flexible substrates can produce high-quality cost-effective transparent conductive films. (C) 2013 Elsevier Ltd. All rights reserved.