▎ 摘　　要

A laser thinning process was developed for producing desired uniform patterns onto trilayer graphene. In contrast of exfoliated graphene which contains small domains with different layer numbers, we used large-size CVD trilayer graphene. This made possible designing of desired graphene patterns on the substrate surface with various laser fluences and scanning speeds. Such control are required for electronic and optical applications. Raman spectroscopy was used to compare produced patterns that were obtained using different laser parameters. We demonstrate optical contrast calculations as an efficient technique to distinguish between produced patterns on trilayer graphene. Comparison of optical contrasts of individually produced patterns under various conditions was performed using optical images taken by optical microscope with different objective lenses. This method can also be applied for graphene with more layers for rapid evaluation of patterns, especially in applications which need fast economic processing.