• 文献标题:   Transport and performance of a zero-Schottky barrier and doped contacts graphene nanoribbon transistors
  • 文献类型:   Article
  • 作  者:   ALAM K
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTOR SCIENCE TECHNOLOGY
  • ISSN:   0268-1242
  • 通讯作者地址:   East West Univ
  • 被引频次:   10
  • DOI:   10.1088/0268-1242/24/1/015007
  • 出版年:   2009

▎ 摘  要

The transport physics and performance of a top gate graphene nanoribbon (GNR) on an insulator transistor are studied for both the MOSFET like doped source-drain and the zero-Schottky barrier source-drain contacts. A voltage controlled tunnel barrier is the device transport physics. The doped source-drain contact device has a higher gate capacitance, higher transconductance, higher on/off current ratio and higher on-state current. The higher on-state current results in a lower switching delay of 17 fs, and the higher transconductance results in a higher intrinsic cut-off frequency of 27 THz in the doped source-drain contact device. The gate voltage, beyond the source-channel flat band condition, modulates both the tunnel and the thermal barrier in the doped source-drain contact devices and the tunnel barrier only in the Schottky contact devices. This limits the on-state current of Schottky contact devices.