• 文献标题:   Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation
  • 文献类型:   Article, Early Access
  • 作  者:   THAKUR MK, HAIDER G, SONIA FJ, PLSEK J, RODRIGUEZ A, MISHRA V, PANDA J, GEDEON O, MERGL M, VOLOCHANSKYI O, VALES V, FRANK O, VEJPRAVOVA J, KALBAC M
  • 作者关键词:   defect passivation, fluorination, graphene, in situ raman spectroscopy, isotope, ultrafast phototransistor
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1002/smll.202205575 EA JAN 2023
  • 出版年:   2023

▎ 摘  要

Tailoring the physicochemical properties of graphene through functionalization remains a major interest for next-generation technological applications. However, defect formation due to functionalization greatly endangers the intrinsic properties of graphene, which remains a serious concern. Despite numerous attempts to address this issue, a comprehensive analysis has not been conducted. This work reports a two-step fluorination process to stabilize the fluorinated graphene and obtain control over the fluorination-induced defects in graphene layers. The structural, electronic and isotope-mass-sensitive spectroscopic characterization unveils several not-yet-resolved facts, such as fluorination sites and C-F bond stability in partially-fluorinated graphene (F-SLG). The stability of fluorine has been correlated to fluorine co-shared between two graphene layers in fluorinated-bilayer-graphene (F-BLG). The desorption energy of co-shared fluorine is an order of magnitude higher than the C-F bond energy in F-SLG due to the electrostatic interaction and the inhibition of defluorination in the F-BLG. Additionally, F-BLG exhibits enhanced light-matter interaction, which has been utilized to design a proof-of-concept field-effect phototransistor that produces high photocurrent response at a time <200 mu s. Thus, the study paves a new avenue for the in-depth understanding and practical utilization of fluorinated graphenic carbon.