▎ 摘　　要

Reliability of 80-, 100-, and 120-nm wide copper interconnects is improved using in situ grown graphene as a capping material. The graphene-capped Cu wires exhibit 2.4-3.5 x longer electromigration (EM) lifetime than thermally annealed Cu. In addition, the Cu resistivity is reduced by about 12%-30% and the breakdown current density is increased by 5%-7%. The graphene cap improves the Cu EM lifetime by mitigating Cu void formation at the interface. However, low-temperature grown graphene oxidizes readily and thus provides limited oxidation protection for the Cu wires.