• 文献标题:   Graphene metrology and devices
  • 文献类型:   Article
  • 作  者:   DIEBOLD AC, NELSON F
  • 作者关键词:   graphene, metrology, hall effect, raman, tem
  • 出版物名称:   INTERNATIONAL JOURNAL OF MATERIALS RESEARCH
  • ISSN:   1862-5282 EI 2195-8556
  • 通讯作者地址:   SUNY Albany
  • 被引频次:   0
  • DOI:   10.3139/146.110263
  • 出版年:   2010

▎ 摘  要

The unusual electronic properties of graphene make it a prime candidate material for extending nanoelectronics and designing new types of switches. Graphene's unusual properties are a result of the unusual band structure associated with the hexagonal bonding, pattern and the electron/hole transport through the pi orbitals. Graphene samples are frequently more than one layer, or few-layer and the change in electronic properties with each layer depends on the stacking configuration and the rotational misorientation between the layers. Transport measurements of single layer graphene (SLG) show that graphene exhibits the quantum Hall effect. In addition, Berry Phase corrections to carrier transport measurements are now widely recognized. Because graphene is a single layer of carbon atoms, it is difficult to find, manipulate, and measure. We review the status of physical and electrical characterization of graphene and discuss the remaining challenges. We discuss results from optical microscopy, transmission election microscopy, low energy electron microscopy, nano-Raman, and several scanned probe methods. Issues such as determination of the number of layers of graphene and rotational stacking misorientation are emphasized.