▎ 摘　　要

Atomically thin two-dimensional (2D) materials are attractive because they have excellent material properties and channel length scalability. Fabrication of complex structures from these materials is also relatively easy. Accordingly, 2D materials such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. This study realizes the low-voltage and high-performance field-effect transistors with chemical vapor deposition-grown single layer graphene employed as the thinnest electrode and semiconducting multilayer (ML) MoS2 utilized as a channel material. The two-terminal mobility of graphene-contacted ML MoS2 using 15 nm Al2O3 as the top-gate dielectric layer is 131.2 cm(2)/(V s) at room temperature, which is higher than that of the previously reported metal/graphene-contacted MoS2. The result demonstrates that van der Waals bonding at the graphene-MoS2 interfaces and high-k dielectric provide an important step toward the realization of high-performance and low-voltage thin-film transistors.