▎ 摘　　要

The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switch properties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619815]