▎ 摘　　要

Phase inversion is demonstrated as an effective method for engineering the microstructure of graphene films by exploiting the well-defined solubility characteristics of polymer dispersants. Drying of a tailored phase inversion ink containing a nonvolatile nonsolvent leads to gelation and subsequent pore formation, providing a promising strategy to tailor the porosity of the resulting graphene films. Graphene films with tunable porosity and electrical conductivity ranging from similar to 1000 to similar to 22 000 S/m are fabricated by this method. Moreover, this dry phase inversion technique is compatible with conventional coating and printing methods, allowing direct ink writing of porous graphene micro-supercapacitor electrodes for energy storage applications. Overall, this method provides a straightforward and versatile strategy for engineering the microstructure of solution-processed nanomaterials.