• 文献标题:   Structural properties of the multilayer graphene/4H-SiC(000(1) overbar) system as determined by surface x-ray diffraction
  • 文献类型:   Article
  • 作  者:   HASS J, FENG R, MILLANOTOYA JE, LI X, SPRINKLE M, FIRST PN, DE HEER WA, CONRAD EH, BERGER C
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   148
  • DOI:   10.1103/PhysRevB.75.214109
  • 出版年:   2007

▎ 摘  要

We present a structural analysis of the multilayer graphene/4HSiC(0001) system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62 angstrom). The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].