▎ 摘　　要

Silicon nitride exhibits good thermal shock resistance and, therefore, it can be shaped by laser processing. Generally, laser treatment mostly depends on wavelength absorption, surface quality and thermal conductivity. Subtractive laser processing is an efficient method of modification up to 1500 mu m depth and usually runs in pulse working (PW) mode. In case of continuous work (CW) mode, intensive processing conditions can result in material destruction which is presented for reference in this paper. The previous research indicates that the hot pressing of the silicon nitride material with GPL particles allowed for obtaining a specific orientation of the 2D graphene-like particles in the material. This led to the anisotropy of its thermal properties. As a result, the positive influence of the oriented heat flow on material laser ablation was investigated. The investigation of the Si3N4/GPLs confirmed the good quality of the laser cut which can proceed throughout the sample. The reported penetration depth reached over 3 mm. The laser treated areas were dimensionally measured and taken under optical and SEM/EDS observation. (C) 2019 Elsevier B.V. All rights reserved.