• 文献标题:   Chemical Vapor Deposition of Multilayer Graphene and Its Characterization with the Auger and Raman Spectroscopy
  • 文献类型:   Article
  • 作  者:   BULATOVA AN, ZHIZHIN E, YU J, KHAN J, BULATOV MF
  • 作者关键词:   multigraphene, cvd method, nickel, auger electron spectroscopy, raman spectroscopy, graphene propertie
  • 出版物名称:   JOURNAL OF NANOELECTRONICS OPTOELECTRONICS
  • ISSN:   1555-130X EI 1555-1318
  • 通讯作者地址:   Astrakhan State Univ
  • 被引频次:   2
  • DOI:   10.1166/jno.2011.1206
  • 出版年:   2011

▎ 摘  要

We used the chemical vapor deposition technique to obtain the large-area few-layer graphene films. The obtained multilayer graphene samples were investigated with the Auger electron spectroscopy and micro-Raman spectroscopy. The size of the domains with the two and threeatomic-plane thickness was on the order of 30 mu m. The Auger and Raman spectroscopic analysis allowed us to correlate the deposition parameters with the number and quality of multilayer graphene. The Auger spectroscopy data complements the information obtained from the micro-Raman spectroscopic characterization. The obtained results can be used for further optimization of the chemical vapor deposition technology of multilayer graphene and its scaling for industrial applications.