• 文献标题:   Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor
  • 文献类型:   Article
  • 作  者:   OH G, JEON JH, KIM YC, AHN YH, PARK BH
  • 作者关键词:  
  • 出版物名称:   NPG ASIA MATERIALS
  • ISSN:   1884-4049 EI 1884-4057
  • 通讯作者地址:  
  • 被引频次:   15
  • DOI:   10.1038/s41427-021-00281-4
  • 出版年:   2021

▎ 摘  要

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3x10(4)) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 mu A/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity.