▎ 摘　　要

We present the results of a systematic study of chemical vapor deposition of graphene on silicon substrates. The silicon substrate is covered with SiO2 and capped with an electron-beam evaporator deposited nickel film, which serves as the catalyst for carbon precursor decomposition. Methane is used as the carbon precursor. Three key parameters of CVD growths, the growth temperature, time, and the post-growth cooling rate are studied and the optimized combination of the three allowed for the reproducible fabrication of single layer graphene of larger than 100 mu m(2) Covering more than 50% of the surface of 1-in. diameter Si wafers. We further demonstrate the transfer of CVD graphene onto SiO2/Si surfaces with higher than 95% success rate. Our result together with those reported by other research groups shows real promise of the integration of carbon electronics with silicon integrated circuit technology. (C) 2009 Elsevier B.V. All rights reserved.