▎ 摘　　要

The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity of similar to 62.1 mAW(1) and similar to 2.1 x 10(11) cm Hz(1/2)W(1), respectively. Time-response results indicate that the device could operate with the frequency up to 1 kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices. (C) 2018 Elsevier B.V. All rights reserved.