• 文献标题:   Phonon-assisted Interfacial Charge Transfer Excitons in Graphene/h-BN van der Waals Heterostructures
  • 文献类型:   Article
  • 作  者:   YANG R, SUN MT
  • 作者关键词:   transparent excition, interfacial charge transfer exciton, hbn phonon, graphene plasmon, graphene, van der waals heterostructure, intravalence band transition
  • 出版物名称:   CHINESE JOURNAL OF PHYSICS
  • ISSN:   0577-9073
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1016/j.cjph.2021.12.030 EA JAN 2022
  • 出版年:   2022

▎ 摘  要

In this paper, we theoretically investigate the interaction between graphene and hexagonal boron nitride (h-BN), including band structure, effective masses, and optical absorption from deep ultraviolet to IR region. It is found that transparency excitons at near violet, visible, near IR and IR are with different physical mechanism of optical absorption in the graphene/h-BN heterostructure. Three of them are the interfacial charge transfer mechanism, and one is the intravalance band transitions with assistance of phonon of h-BN, and the later transparency exciton is the evidence that graphene plasmon couples with the phonon of h-BN with 1380 cm(-1). The band gap of graphene on h-BN substrate with different layers can be well manipulated. Our results reveal detailed interaction between graphene and h-BN, as well as optical properties of transparency excitons in graphene/h-BN heterostructures.