▎ 摘　　要

This paper reports on the results of density functional theory investigations of the band structure of the graphene/Al2O3(0001) interface as a possible element base of graphene field-effect transistors. The regularities of the changes in the band structure in the series graphene -> 2D-Al2O3(0001) -> 2D-graphene/Al2O3(0001) have been analyzed. The specific features of the energy distribution of the surface states in the 2D-graphene/Al2O3(0001) interface have been discussed. The nature of the bonding between graphene and sapphire has been investigated using the density functional theory calculations.