▎ 摘　　要

In this paper, the restorative effect of hydrophobic encapsulation on device characteristics in chemical-vapor-deposition (CVD) graphene based field-effect transistors (GFETs) is investigated. The expectation of such encapsulation lies on an universal method to secure uniformity and reliability in device performance by suppressing the chemical interaction of impurities, hydrophilic organic residues and water molecules with charge carriers confined in graphene of which charge transport can be affected by hydroxyl(-OH) functional group. In addition to improvement in all the key device characteristics, long-term stability is enhanced by encapsulating GFETs with suitable thin-films possessing hydrophobic surfaces.