▎ 摘　　要

Narrow graphene nanoribbon-carbon nanotube (GNR-CNT) stacks were prepared by the plasma unzipping of single-wall carbon nanotubes (SWCNT). A mix-and-match method was developed for the fabrication of nanosized devices in a microsized chip, and the optoelectronic properties of highly sensitive back-gated field-effect phototransistors (FETs) based on the GNR-CNT stack were evaluated. The photoresponse of the representative phototransistors improved near the Dirac point voltage for flat and thick long channels, with an ultrahigh spectral response of 10-50 A W-1 using over wavelength measurement at room temperature. The channel current of FETs decreased from 10(-11) A to 10(-15) A with the decrease in temperature, indicating the semiconducting potential of stacks. Because of the high spectral response of GNR-CNT stacks, they can be used as the optical elements in nanosized photoelectric devices such as phototransistors. (C) 2016 Elsevier Ltd. All rights reserved.