▎ 摘　　要

N-doped graphene oxide (NGO) thin film is synthesized by irradiation of graphene oxide (GO) thin film in NH3 atmosphere. NGO thin film obtained by irradiation of GO thin film for 60 min has a high N-doping level of 12.69 at.%, and the amino-like N dominates the doping with the level of 7.90 at.%. The photoconductivity properties of NGO thin film under white-light illumination have been systematically examined. The results show that compared to reduced graphene oxide (rGO) thin film, NGO thin film exhibits significant photoconductivity enhancement with a high ratio of 2000%, and shows a faster photoresponse. The current responsivity and external quantum efficiency values for the NGO film reach similar to 31 mAW(-1) and similar to 87% at 2 V, respectively. It may attribute to the high doping level of amino-like N on the basal plane and the pyridine-like N at the vacancy-site of graphene sheets, which can offer substantial photocarriers and the effective transfer to the electrodes. (C) 2015 Elsevier Ltd. All rights reserved.