▎ 摘　　要

In this study, the SnO2 nanostructures and graphene-SnO2 (G-SnO2) composite nanostructures were prepared on n-Si (100) substrates by electrophoretic deposition and magnetron sputtering techniques. The field emission of SnO2 nanostructures is improved largely by depositing graphene buffer layer, and the field emission of G-SnO2 composite nanostructures can also further be improved by decreasing sputtering time of Sn nanoparticles to 5 mm. The photoluminescence (PL) spectra of the SnO2 nanostructures revealed multipeaks, which are consistent with previous reports except for a new peak at 422 nm. Intensity of six emission peaks increased after depositing graphene buffer layer. Our results indicated that graphene can also be used as buffer layer acting as interface modification to simultaneity improve the field emission and PL properties of SnO2 nanostructures effectively.