• 文献标题:   Electrical and Photoelectrical Properties of Reduced Graphene Oxide-Porous Silicon Nanostructures
  • 文献类型:   Article
  • 作  者:   OLENYCH IB, AKSIMENTYEVA OI, MONASTYRSKII LS, HORBENKO YY, PARTYKA MV
  • 作者关键词:   porous silicon, reduced graphene oxide, hybrid structure, photosensitivity, currentvoltage characteristic, impedance spectroscopy
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1556-276X
  • 通讯作者地址:   Ivan Franko Natl Univ Lviv
  • 被引频次:   6
  • DOI:   10.1186/s11671-017-2043-7
  • 出版年:   2017

▎ 摘  要

In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS-RGO structure was confirmed. By means of current-voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS-RGO structures. The formation of photosensitive electrical barriers in hybrid structures was revealed. Temporal parameters and spectral characteristics of photoresponse in the 400-1100-nm wavelength range were investigated. The widening of spectral range of photosensitivity of the hybrid structures in short-wavelength range in comparison with single-crystal silicon was revealed. The obtained results broaden the prospects of application of the PS-RGO structures in photoelectronics.