• 文献标题:   Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots
  • 文献类型:   Article
  • 作  者:   TAYARI V, MCRAE AC, YIGEN S, ISLAND JO, PORTER JM, CHAMPAGNE AR
  • 作者关键词:   graphene, suspended, ballistic, quantum dot, fabrication, nems
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Concordia Univ
  • 被引频次:   7
  • DOI:   10.1021/nl503151g
  • 出版年:   2015

▎ 摘  要

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.