• 文献标题:   Odd-integer quantum Hall effect in graphene: Interaction and disorder effects
  • 文献类型:   Article
  • 作  者:   SHENG L, SHENG DN, HALDANE FDM, BALENTS L
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   Univ Houston
  • 被引频次:   59
  • DOI:   10.1103/PhysRevLett.99.196802
  • 出版年:   2007

▎ 摘  要

We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both nu=1 and nu=3 IQHE states are revealed in the lowest two Dirac Landau levels. However, the critical disorder strength above which the nu=3 IQHE is destroyed is much smaller than that for the nu=1 IQHE, which may explain the absence of a nu=3 plateau in recent experiments. While the excitation spectrum in the IQHE phase is gapless within numerical finite-size analysis, we do find and determine a mobility gap, which characterizes the energy scale of the stability of the IQHE. Furthermore, we demonstrate that the nu=1 IQHE state is a Dirac valley and sublattice polarized Ising pseudospin ferromagnet, while the nu=3 state is an xy plane polarized pseudospin ferromagnet.