• 文献标题:   Atomic H diffusion and C etching in multilayer graphene monitored using a Y based optical sensor
  • 文献类型:   Article
  • 作  者:   MUND BK, SOROKA O, STURM JM, VAN DEN BELD WTE, LEE CJ, BIJKERK F
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Univ Twente
  • 被引频次:   0
  • DOI:   10.1116/1.5110213
  • 出版年:   2019

▎ 摘  要

In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH2 and YH3. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness. Published by the AVS.