• 文献标题:   The valley filter efficiency of monolayer graphene and bilayer graphene line defect model
  • 文献类型:   Article
  • 作  者:   CHENG SG, ZHOU JJ, JIANG H, SUN QF
  • 作者关键词:   valley filter, graphene, line defect, disorder
  • 出版物名称:   NEW JOURNAL OF PHYSICS
  • ISSN:   1367-2630
  • 通讯作者地址:   Soochow Univ
  • 被引频次:   15
  • DOI:   10.1088/1367-2630/18/10/103024
  • 出版年:   2016

▎ 摘  要

In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two valley filter models based on monolayer and bilayer graphene. Applying the transfer matrix method, valley resolved transmission coefficients are obtained. Wefind that: (i) under weak disorder, when the line defect length is over about 15 nm, it functions as a perfect channel (quantized conductance) and valley filter (totally polarized); (ii) in the diffusive regime, combination effects of backscattering and bulk states assisted intervalley transmission enhance the conductance and suppress the valley polarization; (iii) for very long line defect, though the conductance is small, polarization is indifferent to length. Under perpendicular magnetics field, the characters of charge and valley transport are only slightly affected. Finally we discuss the efficiency of transport valley polarized current in a hybrid system.