▎ 摘　　要

Deep-ultraviolet (UV) photodetectors based on ultrawide bandgap beta-Ga2O3 have a great potential in civil or military applications especially due to its inherent solar-blindness. Metal-semiconductor phototransistors based on exfoliated beta-Ga2O3 were fabricated using graphene as a highly transparent gate electrode. Controlling the potential barrier at the metal semiconductor junction through the UV-transparent graphene gate expanded the difference between the UV-illuminated current and the dark current. Therefore, the photo-to-dark current ratio (PDCR) was raised by 6 orders of magnitude under the optimal gate bias. The performances of beta-Ga2O3 phototransistors were exceptionally superior among the deep-UV photodetectors based on wide bandgap semiconductor materials; PDCR of 6.0 X 10(8) and rejection ratio of 5.3 X 10(6) could be achieved. The synergetic combination of an ultrawide bandgap semiconductor and two-dimensional UV-transparent graphene provides a new opportunity for high performance deep-UV photodetectors.