• 文献标题:   Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   LAGASSE SW, CRESS CD, HUGHES HL, LEE JU
  • 作者关键词:   ballistic transport, gammaray effect, nanotechnology, radiation effect
  • 出版物名称:   IEEE TRANSACTIONS ON NUCLEAR SCIENCE
  • ISSN:   0018-9499 EI 1558-1578
  • 通讯作者地址:   SUNY Polytech Inst
  • 被引频次:   1
  • DOI:   10.1109/TNS.2016.2626964
  • 出版年:   2017

▎ 摘  要

We demonstrate a quantum transport model for total ionizing dose (TID) effects in graphene devices fabricated on silicon dioxide (SiO2). The scattering matrix method was used to compare transfer characteristics with experimental measurements. To match the pristine transfer curve, the contact on-site energy levels were pinned to +75 meV relative to the channel. TID effects were modeled by introducing positively charged traps throughout the gate oxide. Spatially resolved local density of states and particle current density reveal the effect of the Coulomb potential due to the positively charged traps.