▎ 摘　　要

Parasitic components are becoming increasingly important with geometric scaling in nanoscale electronic devices and interconnects. The parasitic contact resistance between metal electrodes and multilayer graphene (MLG) is a key factor determining the performance ofMLG-based structures in various applications. The available methods for characterizing metal-MLG contact interfaces rely on a model based on the top-contact structure, but it ignores the edge contacts that can greatly reduce the contact resistance. Therefore, in the present work, a rigorous theoretical 1-D model for metal-MLG contact is developed for the first time. The contribution of the major components of resistance-the top and edge contacts (side and end contacts) and the MLG sheet resistivity-to the total resistance of the structure is included in the model. The 1-D model is compared to a 3-D model of the system, and a method for investigation and optimization of the range of validity of the 1-D model is developed. The results of this work provide valuable insight to both the characterization and design of metal-MLG contacts.