▎ 摘　　要

We present numerical studies of nonlinear conduction in graphene nanoribbons when a bias potential is applied between the source and drain electrodes. We find that the conductance quantization plateaus show asymmetry between the electron and hole branches if the potential in the ribbon equals the source or drain electrode potential and strong electron (hole) scattering occurs. The scattering may be at the ends of a uniform ballistic ribbon connecting wider regions of graphene or may be due to defects in the ribbon. We argue that, in ribbons with strong defect scattering, the ribbon potential is pinned to that of the drain (source) for electron (hole) transport. In this case, symmetry between electron and hole transport is restored and our calculations explain the upward shift of the conductance plateaus with increasing bias that was observed experimentally by Lin et al. [Phys. Rev. B 78, 161409(R) (2008)].