▎ 摘　　要

We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO2/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO2, SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.