▎ 摘　　要

This work investigates temperature effects of low-damage plasma (LD plasma) treatment for nitrogen-modification graphene. Different from traditional nitrogen-modification graphene achieved by ammonia plasma, in this work, it is accomplished by the LD plasma with pure nitrogen. The analyses of Raman and XPS spectra show that the concentration of modified nitrogen raised with the substrate temperature from room temperature to 125 degrees C. However, the decrease of nitrogen-modification ratio occurred as the substrate heating temperature higher than 150 degrees C. This might be resulted from the diffusion mechanism of ion species away from the graphene surface. Observed from these experimental results, the highest nitrogen doping ratio on artificial-stacked graphene bilayers (ASGBs) sample occurred at the substrate-heating temperature of 125 degrees C. Based on the developed method, advantages of nitrogen-modification graphene with less contamination can be achieved for further applications.