▎ 摘　　要

High quality graphene is synthesized by pyrolysis of poly (acrylic acid) sodium salt, a novel catalyst-free cost-effective process. A strong Raman signature at 2698 cm(-1) and a small defect (D) band (D/G ratio) confirm the high quality of the synthesized material. Analysis of the Raman parameters implies that it is a 1 or 2 layered material. This graphene is then used to make its composite with semiconducting polymer P3HT for evaluation as a channel in an organic thin film transistor (OTFT) application. The FET based on P3HT-G (composite) yields an order of magnitude high mobility as compared to the case of only P3HT and high current carrying ability. It also exhibits higher on/off ratio as compared to only graphene based TFTs. The P3HT-G composite based FETs are also shown to exhibit improved photo-response as compared to the only P3HT case.