▎ 摘　　要

We report that oxygen plasma treatment of CVD-grown graphene can improve the integrity of an aluminum oxide layer deposited by atomic layer deposition. There is an optimum process window for treatment with O-2 plasma which does not cause serious degradation in the quality of the graphene, but provides significant improvement in the gate dielectric integrity in relation to capacitance uniformity, leakage current, and dielectric breakdown voltage.